ABSTRACT
To study the generation of exciton polaritons in a quantum well embedded in a semiconductor Fabry-Pérot microcavity with distributed Brag reflectors, a simple semi-classical auxiliary differential equation based model is proposed. The solutions are obtained using FDTD method considering only the excitations from ground to next excited states and one single QW resonance. The simulations are presented for GaAs quantum well in Al0.1Ga0.9As microcavity and a ZnS quantum well embedded in CdSe microcavity with 12 DBR layers on either side. Model is proved to be stable and agrees with properties of polarization associated with polariton dispersion. Results show that GaAs is a better quantum well material to generate polaritons than CdSe.
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