In this work, nanocrystalline porous silicon layers were fabricated by photoelectrochemical etching of n type silicon (n-Si) wafer. Different etching time (15, 20, 25 and 30) min and 10 mA/cm2 current density were tested to study their effect on the formation nanosized pore array. Porous silicon is investigation by X-Ray diffractions (XRD) and atomic force microscopy properties (AFM). Crystallites size was estimated by X-Ray diffraction. Atomic Force microscopy confirmed the nonmetric size Chemical Anodization the electrochemical etching was noticed of PS. The atomic force microscopy investigation showed the rough silicon surface which increased with etching time porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits.
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