https://doi.org/10.65770/QJNT2765
ABSTRACT
The lead chalcogenide thin films have attracted researchers for their applications in the field of solid state lasers, IR detectors, and thermoelectrics. Among them, In this paper work done on synthesis and characterization of lead Sulfide (PbS) is reported. PbS thin film deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method. Compositional elements of deposited thin film were confirmed using Energy Dispersive Analysis by X-ray (EDAX).The crystallinity of the PbS film was studied using X-ray diffraction. The structural parameters such as the lattice constant (a), crystallite size (D), dislocation density (δ) and micro strain (ε) were calculated from the XRD spectra. The sharp peaks in the XRD pattern confirms the crystalline nature of the sample. The synthesised thin film was found polycrystalline with grain size in nano meter range. The average crystallite size was found of about 5 nm. Direct energy band gap for PbS was obtained using U-V VIS absorption spectra and it was found as 1.3 eV. The surface morphology of PbS film was studied using SEM . The obtained results are in good agreement with the previous study.
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